unisonic technologies co., ltd UP1496 preliminary pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r206-095.b pnp silicon planar high voltage transistor ? description the utc UP1496 are series of pnp silicon planar transistors which have gain of 500 at i c =100ma. it can be used in such applications like battery powered circuits and darlington replacements. sot-23 1 2 3 ? ordering information pin assignment ordering number package 1 2 3 packing UP1496g-ae3-r sot-23 e b c tape reel ? marking u96g
UP1496 prelimin ary pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-095.b ? absolute maximum ratings parameter symbol ratings unit collector-base voltage v cbo -220 v collector-emitter voltage v ceo -200 v emitter-base voltage v ebo -5 v collector current i c -0.3 a peak pulse current i cm -1 a base current i b -200 ma collector dissipation (t a =25 ) p c 500 mw junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a -220 v collector-emitter breakdown voltage bv ceo i c =-10 ma (note) -200 v emitter-base breakdown voltage bv ebo i e =-100 a -5 v collector cutoff current i cbo v cb =-200 v -100 na emitter cutoff current i ebo v eb =-4 v -100 na collector -emitter cut-off current i ces v ces =-200 v -100 na v ce =-10v , i c =-1ma 100 v ce =-10v , i c =-100ma (note) 100 v ce =-10v , i c =-250ma (note) 85 300 dc current transfer ratio h fe v ce =-10v , i c =-400ma (note) 35 base-emitter turn -on voltage v be(on) v ce =-10v , i c =-250 ma (note) -0.9 v i c =-100ma, i b =-10ma -0.2 v collector-emitter satu ration voltage v ce(sat) i c =-250ma, i b =-25ma (note) -0.35 v base-emitter satura tion voltage v be(sat) i c =-250ma, i b =-25ma (note) -1.0 v transition frequency f t v ce =-10v , i c =-50ma, f=100mhz 150 mhz output capacitance c ob v cb =-10v, f=1mhz 10 pf note: measured under pulse conditions. pulse width=300s. duty cycle 2%.
UP1496 prelimin ary pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-095.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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